MTE652T2
Transcend's MTE652T2 M.2 SSD is designed with the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications, providing unparalleled transfer speeds. The MTE652T2 uses the latest 3D NAND technology for greater storage efficiency, the PCB features 30µ-thick gold connector pins and corner bond technology for durability, built-in DRAM cache for fast access, an extended operating temperature range of -20°C to 75°C, and a 3K data write/wipe endurance rating for reliable operation.
FIRMWARE FEATURES
- Supports NVM commands
- Dynamic thermal throttling
- Integrated LDPC ECC (Error Correction Code) function
- Advanced global wear leveling and defective block management for reliability
- Advanced Waste Collection
- Full disk encryption with Advanced Encryption Standard (AES) (optional)
HARDWARE FEATURES
- Complies with RoHS standards
- Complies with NVM Express 1.3 specifications
- Complies with PCI Express 3.1 specifications
- M.2 form factor (80mm) - ideal for mobile computing devices
- PCIe Gen 3 x 4 interface
- Integrated DDR3 cache module
- Resistance: 3K P/E (Program/Erase) cycles guaranteed
- The main components are factory reinforced with Corner Bond technology
- PCB with 30µ thick gold connection pins
- Power Shield (PS) to ensure data transfer integrity and minimize data corruption on the drive during a power failure
- Promised operational reliability over a wide temperature range (from -20 °C to 75 °C)
SPECIFICATIONS
APPEARANCE |
|
| DIMENSIONS | 80 mm x 22 mm x 3.58 mm (3.15″ x 0.87″ x 0.14″) |
| WEIGHT | 9 g (0.32 oz) |
| FORM FACTOR | - M.2 |
| TYPE M.2 | - 2280-D2-M (Double-sided) |
INTERFACE |
|
| BUS INTERFACE | - NVMe PCIe Gen3 x4 |
STORAGE |
|
| FLASH TYPE | - 3D NAND Flash |
| CAPACITY | - 64 GB/
- 128 GB/ - 256 GB/ - 512 GB |
OPERATING ENVIRONMENT |
|
| OPERATING VOLTAGE | - 3.3V±5% |
| OPERATING TEMPERATURE | - Extended
-20°C (-4°F) ~ 75°C (167°F) |
| STORAGE TEMPERATURE | -55°C (-67°F) ~ 85°C (185°F) |
| HUMIDITY | 5% ~ 95% |
| SHOCK | - 1500 G, 0.5 ms, 3-axis |
| VIBRATION (not working) | 20 G (Peak-to-Peak), 7 Hz ~ 2000 Hz (frequency) |
FOOD |
|
| ENERGY CONSUMPTION (WORKING) | 3.3 Watt(s) |
| POWER CONSUMPTION (IDLE) | 0.6 Watt(s) |
PERFORMANCE |
|
| LECTURA / ESCRITURA SECUENCIAL (CRYSTALDISKMARK) | Read: Up to 2,100 MB/s Write: Up to 1,250 MB/s |
| RANDOM READ / WRITE 4K (IOMETER) | Read: Up to 190,000 IOPS Write: Up to 290,000 IOPS |
| MEAN TIME BETWEEN FAILURES (MTBF) | 3,000,000 hour(s) |
| TERABYTES WRITTEN (TBW) | Up to 1,080 TBW |
| number of discs written per day (dwpd) | 2 (3 years) |
| NOTE |
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