MTE670T

Transcend's MTE670T M.2 SSD features a PCI Express (PCIe) Gen 3 x4 interface and supports NVM Express (NVMe) 1.3 specifications for unprecedented transfer speeds. The MTE670T features next-generation 3D NAND technology, which enables the vertical stacking of 112 layers of 3D NAND flash chips. Compared to 96-layer 3D NAND, this advance in density greatly improves storage efficiency. Applied with a 30µ" gold-plated PCB and Corner Bond technology, the MTE670T is fully tested in-house to ensure reliability in mission-critical applications, with a P/E endurance rating of 3K cycles and an extended operating temperature range of -20℃ ~ 75℃.

112-layer 3D NAND Flash

PCB with 30µ thick gold-plated connector pins

Corner Bond

Extended Temperature

Dynamic Speed Limit Adjustment

Change in Reading Data

Garbage collection

Wear leveling

TRIM

Defective block management

Change in Reading Data

Power Shield (PS)

Features

FIRMWARE FEATURES

  • Supports NVM commands
  • SLC caching technology
  • Dynamic thermal throttling
  • Integrated LDPC ECC (Error Correction Code) function
  • Advanced global wear leveling and defective block management for reliability
  • Advanced Waste Collection
  • Enhanced S.M.A.R.T. function for durability
  • TRIM command for better performance

HARDWARE FEATURES

  • Complies with RoHS standards
  • Complies with NVM Express 1.3 specifications
  • Complies with PCI Express 3.1 specifications
  • M.2 form factor (80mm) - ideal for mobile computing devices
  • PCIe Gen 3 x 4 interface
  • Resistance: 3K P/E (Program/Erase) cycles guaranteed
  • The main components are factory reinforced with Corner Bond technology
  • PCB with 30µ thick gold connection pins
  • Power Shield (PS) to ensure data transfer integrity and minimize data corruption on the drive during an abnormal power failure
  • Extended temperature (-20°C ~ 75°C) and Wide temperature (-40°C ~ 85°C) options available
  • Supports Transcend's Scope Pro software

SPECIFICATIONS

APPEARANCE
DIMENSIONS 80 mm x 22 mm x 2.23 mm (3.15″ x 0.87″ x 0.08″)
WEIGHT 9 g (0.32 oz)
FORM FACTOR - M.2
TYPE M.2 - 2280-S2-M (One side)

INTERFACE
BUS INTERFACE - NVMe PCIe Gen3 x4

STORAGE
FLASH TYPE - 112-layer 3D NAND flash
CAPACITY - 128 GB/

- 256 GB/

- 512 GB/

- 1 TB

OPERATING ENVIRONMENT
OPERATING VOLTAGE - 3.3V±5%
OPERATING TEMPERATURE - Extended

-20°C (-4°F) ~ 75°C (167°F)

- Wide temperature

-40°C (-40°F) ~ 85°C (185°F)
STORAGE TEMPERATURE -40°C (-40°F) ~ 85°C (185°F)
HUMIDITY 5% ~ 95%
SHOCK - 1500 G, 0.5 ms, 3-axis
VIBRATION (WORKING) 20 G (Peak-to-Peak), 7 Hz ~ 2,000 Hz (frequency)

FOOD
ENERGY CONSUMPTION (OPERATING) 3.1 Watt(s)
ENERGY CONSUMPTION (IDLE) 0.4 Watt(s)

PERFORMANCE
SECUENTIAL READING / WRITING (CRYSTALDISKMARK) Read: Up to 2,100 MB/s
Write: Up to 1,600 MB/s
RANDOM READ / WRITE 4K (IOMETER) Read: Up to 150,000 IOPS
Write: Up to 280,000 IOPS
MEAN TIME BETWEEN FAILURES (MTBF) 3,000,000 hour(s)
TERABYTES WRITTEN (TBW) Up to 960 TBW
number of discs written per day (dwpd) 0.88 (3 years)
NOTE - Speed may vary due to host, hardware, software, usage and storage capacity.

- The workload used to qualify the DWPD may be different compared to your actual workload, due to differences in host hardware, software, usage and storage capacity.

- Terabytes Written (TBW) indicates endurance under the highest capacity.

 

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